News

Photin research Majorana2 core quantum technology materials

Topological Superconductivity in InAs-InAsSb semiconductors for quantum computers and qbits

Posted on June 7, 2026

Deep-tech physics inside Majorana 2 is topological superconductivity, and phenomena that occur between semiconductor-superconductor (indium arsenide antimonide-lead InAsSb-Pb). As epitaxy engineer, I skip in all high level details (protocols, measurements, Marjorana particles etc.). Will focus on core materials. What epitaxial layers form core stack of this approach to harness quantum... [Read More]

Tags: news Quantum Majorana InAsSb InAs GaSb Microsoft Quantum

MWIR InAs-InAsSbP samples

Lets build something together in IR

Posted on March 27, 2026

We were looking for easy way to protect our samples of MWIR InAs detectors chips for shipment to customer, so they would be well protected, couldn’t be mixed up, take least amount of space, and be inexpensive. During brainstorming, we “stepped on something”, which turned out to be perfect package... [Read More]

Tags: news release InGaAsP PICs lasers regrowth

PhotonQBoost Call: Evaluators Split 5 vs 3 on Impact — Yet No Consensus Was Required. Proposal unqualified.

How inverted per-criterion scoring can mask a fundamental evaluator disagreement. Full evaluation, appeal, and responses shared transparently.

Posted on March 17, 2026

What is PhotonQBoost? What Photin Applied For Solutions — Industrial Scale-up Proposal Trainings & Services — Capability Building Missions — Germany (Stuttgart) Results Summary Evaluation Feedback Solutions — Evaluator Comments Trainings & Services — Evaluator Comments Missions — Evaluator Comments Anomalies Found 1. Inverted Per-Criterion Scoring Masks Impact Disagreement (Solutions)... [Read More]

Tags: PhotonQBoost MOCVD III-V photonics MWIR EU grant evaluation InAs antimonides

Need4Speed Frequency Combs need InAs MWIR detectors

Photin InAs detectors speed measured

Posted on January 30, 2026

The team from Wroclaw University of Technology (Ł.Sterczewski, G.Gomółka) tested all major commercial extended InGaAs detectors providers. Just to found out their 1-2.6um range are still too narrow for their research.. to see, measure and use frequency combs. combs](https://www.nist.gov/topics/physics/optical-frequency-combs). We were thrilled to provide them custom InAs MWIR detector chips... [Read More]

Tags: Frequency Combs GHz MWIR fast detectors InAs InAsSbP

Photin goes Quantum

Quantum Well lasers structure demonstrated

Posted on December 28, 2025

After spectacular success of our InAs-InAsSbP state of the art heterostructures and MWIR detectors made from our wafers, inquiry from Asian University prompted us work on InGaAsP/InGaAs/InP MQW laser. The aim was to demonstrate InP PICs R&D capability to market. We entered into Quantum era, but not the buzzworld quantum,... [Read More]

Tags: news release InGaAsP PICs lasers regrowth

Mazovian Innovative Company Contest

Distinction

Posted on November 6, 2025

Last week we had pleasure of participate in the Gala of Mazovian Innovator Contest. There were two categories: Innovative Company, Innovative Scientist. Innovation as you will see have many meanings, that are sometimes difficult to comprehend. Photin submission as innovative company was: Technology of compound semiconductors Indium Arsenide MOCVD growth... [Read More]

Tags: MOVPE MOCVD OMVPE GaAs InP LP-MOVPE

From Silicon to III-V Semiconductors with LP-MOVPE

Jean Pascal Duchemin legacy

Posted on October 26, 2025

They say: XX century = Electronics, XXI century = Photonics! The success of GaN/SiC LEDs and Power, or InP-lasers and fiber internet is our reality. Have you ever thought, how the leap from Silicon to III-V compound semiconductors (GaAs and InP) happened? [Read More]

Tags: MOVPE MOCVD OMVPE GaAs InP LP-MOVPE

Photin InAs MWIR detectors - Limited Sales Available to Purchase

Photonics made in Poland

Posted on October 13, 2025

What was some time ago only distant dream, today it is reality in our hands. Production batch of MWIR InAs/InAsSbP 500um diameter detector chips, ready to be delivered to first customers. Made in Poland by Photin and MUT. [Read More]

Tags: news release PD detectors InAs InAsSbP

Photin InAs Wafer Passed Qualifications

InAs PD Results and Datasheet comparisons

Posted on August 21, 2025

Semiconductors Technology Race [Read More]

Tags: news release PD detectors InAs InAsSbP

Trumpf / Huttinger TIG/BIG Analog RF Generators for Induction Heating

Induction Heater Repair at End Of Life

Posted on August 6, 2025

Trumpf / Huttinger TIG/BIG Induction Heaters [Read More]

Tags: news MOCVD Trumpf Huttinger Induction Heater RF Generator TIG 10/100

Hero Dies - First Chips of III-V Semiconductor IR detectors

True Heroes Born Out of Passion!

Posted on July 30, 2025

Hero Chips [Read More]

Tags: news MOCVD InAs InAsSbP detector

PHOTIN InAs/InAsSbP achieve state of the art performance

InAs IR Detectors device performance

Posted on February 18, 2025

Device results from Photin wafers [Read More]

Tags: news MOCVD InAs InAsSbP detector

Photin demonstrate Type 2 InAs/InAsSb Superlattice (T2SLs) materials from MOCVD

Posted on October 24, 2024

In recent 10 years, they are the one of the most researched material concept for infrared (in particular solar cells and detectors). Aimed to de-throne HgCdTe, material which still reign as the one with the best properties for IR detectors, except …the manufacturability. Type II Superlattices(T2SLs) made from InAs/InAsSb are... [Read More]

Tags: news T2SL

Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing

Publication with Lancaster University and ams-OSRAM.

Posted on April 17, 2023

Advanced extended SWIR detector development [Read More]

Tags: news InGaAsSb projects

InnoGlobo2 grant with MUT and KIND Lab on passivation of IR detectors

Passivation of Barrier (InGaAsSb/AlGaAsSb) and APD detectors

Posted on February 7, 2023

Intro [Read More]

Tags: news grant projects passivation

MVP - eSWIR InGaAsSb barrier detector from MOCVD

Posted on December 24, 2022

Intro into Antimonides in MOCVD - very challenging topic [Read More]

Tags: news mvp projects

Limits of in Situ reflectance for growth rate extraction in aixtron multi Wafer reactors

Posted on July 25, 2022

[Read More]

IC-MOVPE XX Stuttgart 2022!

Posted on July 11, 2022

It is tremendous pleasure to go again to international conference. Last time it was 11 years ago at EW-MOVPE XIV in Wroclaw. Apparently, when working in industry conferences are rare treat. [Read More]

Tags: news conferences

Transfer of FZU Aix-200 reactor

Posted on May 20, 2022

In late 2021 Photin get in touch with FZU MOVPE group. It was miracle, to find in nearby country Aix-200 MOVPE system fully equipped to conduct research on III-Sb materials, with scientists, who are experts in this area. FZU MOVPE were leaving the field of III-V, and moving to III-N... [Read More]

Tags: MOCVD Aixtron reactor RAS

GaSb buffers on GaSb

Posted on May 7, 2022

Have started GaSb buffer development with cleaving Ensemble3 GaSb Zn-doped substrate (bought from EVO-R funds) to 6 pieces, and running experiments. [Read More]

Tags: news GaSb

First runs: GaSb buffer on GaSb

Posted on April 25, 2022

Well, finally have started first growths. It took a while, as there were some modifications and adaptations necessary to make GaN reactor become III-Sb reactor: [Read More]

Tags: news projects

Photin complete the EIT Manufacturing EVO-R project

Posted on April 7, 2022

Photin complete EIT Manufacturing EVO-R project dedicated to purchase, transfer, and set-up of Aixtron Aix-200RF MOCVD reactor from Ulm University to Photin facility. [Read More]

Tags: news projects

Acquisition of FZU Aix-200 reactor

Posted on March 3, 2022

Photin acquired the first commercial Aixtron Aix-200RF reactor, superbly rebuilt and maintained by Czech Academy of Sciences team. [Read More]

Tags: MOCVD Aixtron reactor RAS