Advanced extended SWIR detector development
We are happy to share open access publication from our recent work on eSWIR barrier detector development project, where Photin worked together with Lancaster University and ams-OSRAM on:
“Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing”
L. A. Hanks $*^1$, K. Mamic$^1$ K. Kłos$^2$ A. Bainbridge$^1$ J. Fletcher$^1$ L. Gilder$^1$ L. Tedstone$^1$ F. J. Castaño$^3$ and A. R. J. Marshall$^1$
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
- Photin LLC, 05-080 Klaudyn, Poland
- ams-OSRAM AG, Technology R&D, Tobelbader Strasse 30, 8141
Premstaetten, Austria
*Corresponding author: Laura Hanks
Outline
Photin in this project witnessed and contributed to rapid traverse from ~TRL4 to TRL 8/9 of IR detector development project with state of the art scientists from Lancaster University and Tier1 manufacturer ams-OSRAM.
It was pure pleasure to work in such a great team of specialists, which worked across multiple countries.
https://doi.org/10.1364/OE.485631
Outcome
As far as we know, as the results of this project, it was achieved the lowest dark currents (and highest detectivity) for eSWIR InGaAsSb detectors with ~2.2µm cut-off at room temperature published so far. Comparison with literature is shown below:
In the scope of project multiple professional foundries and companies
providing GaSb-based wafers processing were tested.
The “Quasi-planar” processing scheme developed by Lancaster University
delivered consistently the best outcomes in terms of leakage from all
competition.
Follow up
When optimal epitaxy design of layer structures were established with
help of the Crosslight Apsys and Synopsys Sentaurus TCAD tools, then
they were grown and processed for verification.
The large portion of total dark current come from perimeter leakage
mechanisms. This highlight importance of proper passivation, which will
be subject of
InnoGlobo2
grant with Military University of Technology and KindLab, which should
start in 2023.