After spectacular success of our InAs-InAsSbP state of the art heterostructures and MWIR detectors made from our wafers, inquiry from Asian University prompted us work on InGaAsP/InGaAs/InP MQW laser. The aim was to demonstrate InP PICs R&D capability to market. We entered into Quantum era, but not the buzzworld quantum,...
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Mazovian Innovative Company Contest
Distinction
Last week we had pleasure of participate in the Gala of Mazovian Innovator Contest. There were two categories: Innovative Company, Innovative Scientist. Innovation as you will see have many meanings, that are sometimes difficult to comprehend. Photin submission as innovative company was: Technology of compound semiconductors Indium Arsenide MOCVD growth...
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From Silicon to III-V Semiconductors with LP-MOVPE
Jean Pascal Duchemin legacy
They say: XX century = Electronics, XXI century = Photonics!
The success of GaN/SiC LEDs and Power, or InP-lasers and fiber internet
is our reality.
Have you ever thought, how the leap from Silicon to III-V compound
semiconductors (GaAs and InP) happened?
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Photin InAs MWIR detectors - Limited Sales Available to Purchase
Photonics made in Poland
What was some time ago only distant dream, today it is reality in our
hands. Production batch of MWIR InAs/InAsSbP 500um diameter detector
chips, ready to be delivered to first customers. Made in Poland by
Photin and MUT.
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Photin InAs Wafer Passed Qualifications
InAs PD Results and Datasheet comparisons
Semiconductors Technology Race
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