Device results from Photin wafers
[Read More]
Photin demonstrate Type 2 InAs/InAsSb Superlattice (T2SLs) materials from MOCVD
In recent 10 years, they are the one of the most researched material concept for infrared (in particular solar cells and detectors). Aimed to de-throne HgCdTe, material which still reign as the one with the best properties for IR detectors, except …the manufacturability. Type II Superlattices(T2SLs) made from InAs/InAsSb are...
[Read More]
Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing
Publication with Lancaster University and ams-OSRAM.
Advanced extended SWIR detector development
[Read More]
InnoGlobo2 grant with MUT and KIND Lab on passivation of IR detectors
Passivation of Barrier (InGaAsSb/AlGaAsSb) and APD detectors
Intro
[Read More]
MVP - eSWIR InGaAsSb barrier detector from MOCVD
Intro into Antimonides in MOCVD - very challenging topic
[Read More]