MOCVD Planetary Reactor G1 15” x 2” and 8” x 3”
This reactor was built for US company “Bandgap”, and then used by SST, who was put it on CAE for sale.
Configuration:
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | |
---|---|---|---|---|---|---|---|---|
Hyd | As1 | As2 | Ph1 | Si2H6 | HCl | Spare | ||
MO | Ga1 | Ga2 | In1 | In2 | Al1 | Al2 | Mg | Zn |
Temperature range: Up to 850°C
Recently used for AlInGaP LEDs
Gases used: Arsine, Phosphine, DiSi2H6, HCL
Windows based operating system: Upgraded from OS9
Inquiries for growth of 2” wafers on GaSb, GaAs, and InP could be sent to kk{sign}photin.eu.
!!We send Thanks to dr Chen who was the last Epi expert who worked on this machine!!